Micron 16GB (1x 16GB) CL19 DDR4-2666 PC4-21300 1.2V ECC Registered 288-pin RDIMM RAM Module Speed_DDR2-667 512GB: 1170MB/s

512GB: 1170MB/s

x8 configuration RAM module from Hynix is for use in DDR2 compatible systems and operates at 800 MT/s with an overall transfer rate of PC2-6400

8V Technology DDR2 Error Correction ECC Signal Processing Unbuffered Form Factor 240-pin EUDIMM Ranks Single rank Configuration 9-chip 256M x8 Pieces in Kit 2 Compatibility

M378B5673FH0-CF8 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

Active Power Consumption

Micron 16GB (1x 16GB) CL19 DDR4-2666 PC4-21300 1.2V ECC Registered 288-pin RDIMM RAM Module Speed_DDR2-667 512GB: 1170MB/sProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 16GB (1x 16GB) DDR4 2666 MT s 288 pin RDIMM RAM module from Micron . This RAM module is for use in DDR4 compatible systems and operates at 2666 MT s with an overall transfer rate of PC4 21300. This RAM module also operates at a standard voltage of 1. 2V with a CAS Latency of CL19, and is