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5V Technology DDR3 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Single rank Configuration 8-chip 128M x8 Pieces in Kit 2 Compatibility
Why is the speed of this RAM kit shown as 1066 MT/s instead of 1066 Mhz
5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM Ranks Dual rank Configuration x4 Pieces in Kit 2 Compatibility
M393A1G40DB0-CPB Capacity 8GB (1x 8GB) Brand Samsung Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
HMT125U6TFR8C-H9 Capacity 2GB (1x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
Samsung 8GB (2x 4GB) CL11 DDR3-1600 PC3-12800 1.5V SR x8 240-pin UDIMM RAM Kit Speed_DDR4-2666 5V Technology DDR3 Error CorrectionProduct Overview This 8GB (2x 4GB) DDR3 1600 MT s Single rank, x8 configuration RAM kit from Samsung is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM kit also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical
