Hypertec 4GB PC3-10600 (Legacy) memory module 1 x 4 GB DDR3 1333 MHz DDR3 2 V Memory ranking 1

2 V Memory ranking 1 ECC No Memory clock speed 2666 MHz Internal memory type DDR4 Features Buffered memory type Unregistered (unbuffered) Backlight No Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Component for Laptop Memory form factor 260-pin SO-DIMM CAS latency 19 Memory voltage 1

registered ECC DDR3 SDRAM - DIMM 240-pin1333 MHz ( PC3-10600 ) from Hypertec

Memory Buffered memory type Unregistered (unbuffered) Internal memory 2 GB Memory form factor 240-pin DIMM Memory ranking 1 ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3 Features Buffered memory type Unregistered (unbuffered) Internal memory 2 GB Memory form factor 240-pin DIMM Memory ranking 1 ECC Yes Memory clock speed 1600 MHz Internal memory type DDR3

Memory Package type SO-DIMM Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Component for Notebook Memory form factor 204-pin SO-DIMM CAS latency 9 Memory type PC3-10600 Memory clock speed 1333 MHz Internal memory type DDR3 Technical details Number of pins 204 Features Memory layout (modules x size) 1 x 4 GB Internal memory 4 GB Component for Notebook Memory form factor 204-pin SO-DIMM CAS latency 9 Memory type PC3-10600 Memory clock speed 1333 MHz Internal memory type DDR3 Weight & dimensions Package type SO-DIMM Packaging data Package type SO-DIMM Other features Number of pins 204

Get memory that’s Ready for AMD Ryzen and will seamlessly integrate with your AMD-based SODIMM-compatible system

Hypertec 4GB PC3-10600 (Legacy) memory module 1 x 4 GB DDR3 1333 MHz DDR3 2 V Memory ranking 1A Hypertec Legacy Memory Module is a module that uses no current DRAM technology and is no longer in mainstream production by OEMS and or third party suppliers. Hypertec are committed to providing a full memory upgrade landscape as part of our core product offering and as such, there may be occasions where we need to utilise professionally repurposed components. Any repurposed components are removed within a full ESD environment and then used to