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600V collector-emitter breakdown voltage (VCES) suitable for 3-phase 230V/400V inverter topologies
Fuji IGBT modules of this vintage are increasingly difficult to source through standard distribution channels as demand from legacy equipment maintenance competes with limited manufacturing capacity
availability confirmation
especially when original manufacturers have discontinued production runs or lead times stretch into months
Built-in gate drive and protection circuitry reduces external component requirements
FS450R12KE3-INFINEON Palmetto Inventory 600V collector-emitter breakdown voltage (VCES)The Infineon FS450R12KE3 is a high current, high voltage IGBT module engineered for the most demanding power conversion applications. Rated at 450 amperes and 1200 volts, this module leverages Infineon's advanced trench gate IGBT technology combined with soft recovery emitter controlled diodes to deliver exceptional efficiency, reduced switching losses, and reliable thermal performance in high power systems. The robust construction and optimized chip
US$ 11.20
US$ 19.90
US$ 700.00
US$ 11.99
US$ 48.70
